parameter max. units v ds drain- source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -11 i d @ t a = 70c continuous drain current, v gs @ -10v -9.3 a i dm pulsed drain current ? -47 p d @t a = 25c power dissipation ? 2.5 p d @t a = 70c power dissipation ? 1.6 linear derating factor 20 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c 3/29/01 www.irf.com 1 irf7424 hexfet ? power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications.. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering techniques. description l ultra low on-resistance l p-channel mosfet l surface mount l available in tape & reel pd- 94024a parameter max. units r q ja maximum junction-to-ambient ? 50 c/w thermal resistance absolute maximum ratings w top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss r ds(on) max (m w) w) w) w) w) i d -30v 13.5@v gs = -10v -11a 22@v gs = -4.5v -8.8a so-8
irf7424 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.019 CCC v/c reference to 25c, i d = -1ma CCC CCC 13.5 v gs = -10v, i d = -11a ? CCC CCC 22 v gs = -4.5v, i d = -8.8a ? v gs(th) gate threshold voltage -1.0 CCC -2.5 v v ds = v gs , i d = -250a g fs forward transconductance 17 CCC CCC s v ds = -10v, i d = -11a CCC CCC -15 v ds = -24v, v gs = 0v CCC CCC -25 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 75 110 i d = -11a q gs gate-to-source charge CCC 14 21 nc v ds = -15v q gd gate-to-drain ("miller") charge CCC 12 18 v gs = -10v t d(on) turn-on delay time CCC 15 CCC v dd = -15v ? t r rise time CCC 23 CCC i d = -1.0a t d(off) turn-off delay time CCC 150 CCC r g = 6.0 w t f fall time CCC 76 CCC v gs = -10v c iss input capacitance CCC 4030 CCC v gs = 0v c oss output capacitance CCC 580 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 410 CCC ? = 1.0khz parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.5a, v gs = 0v ? t rr reverse recovery time CCC 40 60 ns t j = 25c, i f = -2.5a q rr reverse recovery charge CCC 47 71 nc di/dt = -100a/s ? source-drain ratings and characteristics a -47 CCC CCC CCC -2.5 CCC s d g ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) i gss a m w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns ? surface mounted on 1 in square cu board
irf7424 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -2.5v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -2.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -10v -4.5v -3.7v -3.5v -3.3v -3.0v -2.7v -2.5v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -2.5v 0.1 1 10 100 2.5 3.0 3.5 4.0 4.5 5.0 v = -15v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -11a
irf7424 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 1000 2000 3000 4000 5000 6000 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0 20 40 60 80 0 2 4 6 8 10 12 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs i = d -11a v = -15v ds v = -24v ds
irf7424 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) -i , drain current (a) c d v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
irf7424 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 4.0 6.0 8.0 10.0 -v gs, gate -to -source voltage (v) 0.010 0.015 0.020 0.025 0.030 0.035 r ds(on) , drain-to -source on resistance ( w ) i d = -11a 0 102030405060 -i d , drain current (a) 0.010 0.015 0.020 0.025 0.030 r ds (on) , drain-to-source on resistance ( w ) v gs = -10v v gs = -4.5v
irf7424 www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature fig 16. typical power vs. time 0.001 0.010 0.100 1.000 10.000 100.000 time (sec) 0 20 40 60 80 100 120 power (w) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -v gs(th) gate threshold voltage(v) i d = -250a
irf7424 8 www.irf.com so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion doe s not include mold prot rus ions . 6 dimens ion doe s not include mold prot rus ions . mol d prot rus ions not t o e xce ed 0.25 [.010]. 7 dimens ion is t he lengt h of lead f or s olde ring t o a s ubst rate. mol d prot rus ions not t o e xce ed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf7101 (mosfet ) internat ional rectifier logo f7101 yww xxxx part number lot code ww = week y = las t digit of t he ye ar dat e code (yww)
irf7424 www.irf.com 9 33 0.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conform s to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01
|
